Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2907A/TR

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Bipolar Transistors - BJT BJTs
Description
Bipolar Transistors - BJT BJTs
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PNP silicon small signal transistor for general-purpose amplification and switching, packaged in TO-18 case with a collector connected to the case, rated for 60 V collector-emitter and collector-base voltage, 600 mA collector current, and 0.5 W total power dissipation at 25°C, with an operating and storage junction temperature range from -65°C to +200°C, qualified to MIL-PRF-19500/291.

Datasheet Summary
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PNP silicon small signal transistor for general-purpose amplification and switching, packaged in TO-18 case with a collector connected to the case, rated for 60 V collector-emitter and collector-base voltage, 600 mA collector current, and 0.5 W total power dissipation at 25°C, with an operating and storage junction temperature range from -65°C to +200°C, qualified to MIL-PRF-19500/291.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
Jantxv2N2907A/TR
Bipolar Transistors - BJT Jantxv2N2907A/TR
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number Jantxv2N2907A/TR
Product Name Bipolar Transistors - BJT
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