Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2906AUA

The 2N2906AUA is a PNP small signal silicon transistor in a surface-mount package, designed for general-purpose amplification and switching applications. It features a collector-emitter voltage rating of 60 Vdc, a collector current of 600 mAdc, and a total power dissipation of 0.5 W at 25°C. The device operates over a junction temperature range of -65°C to +200°C. Electrical characteristics include a minimum forward-current transfer ratio of 40 at 1 mA collector current, a collector-emitter saturation voltage of 0.4 V at 150 mA collector and 15 mA base current, and an input capacitance of 30 pF. The package is a four-terminal surface mount configuration with an internal collector connection to the case and a ceramic lid, compliant with MIL-PRF-19500/291. Specific to the U A variant, it is available up to JANTXV quality level.