Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2906AUA/TR

The Jantxv2N2906AUA/TR is a PNP small signal silicon transistor in a surface-mount ceramic lid package, qualified to JANTXV level per MIL-PRF-19500/291. It has a collector-emitter voltage rating of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. Operating and storage junction temperatures range from -65°C to +200°C. The transistor features a forward current transfer ratio (hFE) of 40 to 175 at 1.0 mA collector current and 10 V collector-emitter voltage. Switching times include a turn-on time of 45 μs and turn-off time of 300 μs. Input and output capacitances are 30 pF and 8.0 pF respectively. Package dimensions align with the TO-18 format for metal case variants, while the UBA variant uses a leadless surface-mount ceramic lid configuration.