Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2906A/TR

PNP silicon small signal transistor in a TO-18 package, rated for a collector-emitter voltage of 60 Vdc and a continuous collector current of 600 mA, with a total power dissipation of 0.5 W at 25°C. The device operates over a junction temperature range of -65°C to +200°C and meets MIL-PRF-19500/291 qualifications. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 40 to 120 at 150 mA collector current, a collector-emitter saturation voltage of 0.4 V at 150 mA collector and 15 mA base current, and an emitter-base saturation voltage up to 1.3 V under the same conditions. Input capacitance is 30 pF, and output capacitance is 8.0 pF. Switching times are 45 μs for turn-on and 300 μs for turn-off.