Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2905A/TR

The Jantxv2N2905A/TR is a PNP silicon switching transistor in a TO-39 (TO-205AD) package, hermetically sealed with a kovar base and nickel cap, weighing approximately 1.064 grams. It has a collector-emitter voltage rating of 60 V, a collector-base voltage rating of 60 V, and an emitter-base voltage rating of 5.0 V. The maximum collector current is 600 mA, with a total power dissipation of 0.8 W at 25°C ambient temperature. Thermal resistance is 195 °C/W junction-to-ambient and 50 °C/W junction-to-case. The operating and storage junction temperature range is -65 to +200 °C. It is qualified to MIL-PRF-19500/290 at the JANTXV level. The device has a minimum DC current gain (hFE) of 50 at 500 mA collector current and 10 V collector-emitter voltage. Switching characteristics include a turn-on time of 45 ns and a turn-off time of 300 ns.