Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2605

The Jantxv2N2605 is a PNP silicon low-power transistor in a TO-46 package, with a collector-base voltage rating of 70 Vdc, collector-emitter voltage of 60 Vdc, and collector current of 30 mAdc. It dissipates up to 400 mW at +25°C ambient temperature and operates from -65°C to +200°C. The device has a minimum DC current gain of 100 and a maximum of 450 at 10 mA collector current, with a collector-emitter saturation voltage of 0.3 V at 10 mA collector and 500 μA base current. It meets MIL-PRF-19500/354 qualification standards and is designed for general-purpose switching and amplification applications.