Microsemi Corp. Bipolar Transistors - BJT JANTXV2N2369A/TR

NPN silicon transistor for high-frequency switching applications, available in TO-18 (TO-206AA) metal can package. Collector-emitter voltage rating is 15 Vdc, collector-base voltage is 40 Vdc, and emitter-base voltage is 4.5 Vdc. Maximum power dissipation is 0.36 W at +25°C, with thermal resistance from ambient to case of 400 °C/W. Current gain (hFE) ranges from 20 to 120 at collector currents up to 100 mA. Collector-emitter saturation voltage is 0.45 V at 100 mA collector and 10 mA base current. Turn-on and turn-off times are 12 µs and 18 µs respectively under pulse test conditions. Qualified per MIL-PRF-19500/317, operating and storage junction temperature range is -65 to +200 °C.