Radiation-hardened NPN silicon switching transistor in a 4-pin ceramic package, rated for a collector-emitter voltage of 50 Vdc, collector current of 800 mAdc, and total power dissipation of 0.50 W. Operating and storage junction temperature ranges from -65 to +200 °C. Qualified to 100 krad(Si) total ionizing dose per JANTXVR level.
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4 Product overview: JANTXV2N2222AUB from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.8A, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 0.8A, 50V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANTXV2N2222AUB
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANTXV2N2222AUB |
| Product Name | 0.8A 50V Bipolar Transistor |
| IC(max) | 800 milliamps |
