NPN silicon switching transistor in a 4-pin surface mount package with a collector-emitter voltage rating of 50 Vdc, collector current of 800 mAdc, and power dissipation of 0.5 W at +25°C. The device has a thermal resistance of 325 °C/W, junction temperature range of -65 to +200 °C, and is qualified per MIL-PRF-19500/255. Package dimensions conform to the UB configuration with emitter, base, collector, and shielded lid connections.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | Jantxv2N2222AUB/TR |
| Product Name | Bipolar Transistors - BJT |
