Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2222AUA

NPN silicon switching transistor in a 4-pin surface mount package with a ceramic lid, designed for high-reliability applications. The device has a collector-emitter voltage rating of 50 Vdc, collector current of 800 mAdc, and total power dissipation of 0.5 W at +25°C. Thermal resistance junction-to-ambient is 210 °C/W. Electrical characteristics include a forward-current transfer ratio (hFE) of 100 to 300 at 150 mA collector current and 10 V collector-emitter voltage. Turn-on time is 35 µs and turn-off time is 300 µs. The transistor meets MIL-PRF-19500/255 qualification standards.