NPN silicon switching transistor in a TO-18 package with 50 V collector-emitter voltage, 800 mA collector current, and 0.5 W power dissipation. It meets MIL-PRF-19500/255 qualification standards. Thermal resistance is 210 °C/W. Minimum current gain is 100 at 10 mA collector current and 10 V collector-emitter voltage. Turn-on time is 35 µs and turn-off time is 300 µs. The collector is internally connected to the case.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | Jantxv2N2222AUA/TR |
| Product Name | Bipolar Transistors - BJT |
