Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2222AL

NPN silicon switching transistor in a TO-18 package, rated for a collector-emitter voltage of 50 Vdc, collector current of 800 mAdc, and total power dissipation of 0.5 W at +25°C. The device meets MIL-PRF-19500/255 qualification with an operating and storage junction temperature range of -65 to +200°C. Thermal resistance junction-to-ambient is 325 °C/W for the L suffix variant. Forward current transfer ratio ranges from 50 to 325 at collector currents up to 150 mA and collector-emitter voltage of 10 Vdc. Collector-emitter saturation voltage is 0.3 Vdc at 150 mA collector current and 15 mA base current. Turn-on time is 35 µs and turn-off time is 300 µs under pulse test conditions.