Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2222AL/TR

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Bipolar Transistors - BJT BJTs
Description
Bipolar Transistors - BJT BJTs
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NPN silicon switching transistor in a TO-18 (TO-206AA) package with a 50 V collector-emitter voltage rating, 800 mA collector current capability, and 0.5 W power dissipation at +25°C. The device has a junction-to-ambient thermal resistance of 325 °C/W and operates from -65°C to +200°C. It is qualified per MIL-PRF-19500/255, and its switching characteristics include a turn-on time of 35 µs and turn-off time of 300 µs.

Datasheet Summary
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NPN silicon switching transistor in a TO-18 (TO-206AA) package with a 50 V collector-emitter voltage rating, 800 mA collector current capability, and 0.5 W power dissipation at +25°C. The device has a junction-to-ambient thermal resistance of 325 °C/W and operates from -65°C to +200°C. It is qualified per MIL-PRF-19500/255, and its switching characteristics include a turn-on time of 35 µs and turn-off time of 300 µs.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
Jantxv2N2222AL/TR
Bipolar Transistors - BJT Jantxv2N2222AL/TR
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number Jantxv2N2222AL/TR
Product Name Bipolar Transistors - BJT
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