Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2222A

NPN silicon switching transistor for high-reliability applications, available in TO-18 package with a minimum case diameter of 0.178 inches and height of 0.230 inches, or as a 4-pin surface-mount variant with dimensions specified for UA, UB, and UBC configurations. Rated for a collector-emitter voltage of 50 Vdc, collector-base voltage of 75 Vdc, and collector current of 800 mAdc. Maximum power dissipation is 0.5 W at +25°C with thermal resistance ranging from 210 to 325 °C/W depending on package. Current gain (hFE) ranges from 100 to 300 at 150 mA collector current. Qualified to MIL-PRF-19500/255. Operating and storage junction temperature range is -65 to +200 °C.