Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2221AUA

NPN silicon switching transistor in a TO-18 (TO-206AA) package with a 3-pin configuration, qualified to MIL-PRF-19500/255 JANTXV level. It has a collector-emitter voltage rating of 50 Vdc, collector-base voltage of 75 Vdc, and collector current of 800 mAdc. Maximum power dissipation is 0.5 W at 25°C, with thermal resistance from junction to ambient of 210 °C/W. Forward current transfer ratio ranges from 40 to 120 at 150 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 0.3 V at 150 mA collector current and 15 mA base current. Turn-on time is 35 μs and turn-off time is 300 μs. The collector is internally connected to the case.