NPN silicon switching transistor in a TO-18 package, rated for a collector-emitter voltage of 50 Vdc, collector current of 800 mAdc, and total power dissipation of 0.5 W at 25°C. The device has a junction-to-ambient thermal resistance of 210 °C/W and operates from -65°C to +200°C. It is qualified to MIL-PRF-19500/255 with a forward current transfer ratio (hFE) of 40 to 120 at 150 mA collector current and 10 V collector-emitter voltage. Switching times are 35 μs turn-on and 300 μs turn-off. The collector is internally connected to the case.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | Jantxv2N2221AUA/TR |
| Product Name | Bipolar Transistors - BJT |
