Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2221A

NPN silicon switching transistor in a TO-18 (TO-206AA) package, qualified to MIL-PRF-19500/255 at JANTXV level. Collector-emitter voltage is rated at 50 Vdc, collector-base voltage at 75 Vdc, and emitter-base voltage at 6.0 Vdc. Maximum collector current is 800 mA, with a total power dissipation of 0.5 W at +25°C. Thermal resistance from junction to ambient is 210 °C/W. Junction and storage temperature range is -65 to +200 °C. Forward current transfer ratio ranges from 40 to 120 at 150 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 0.3 V at 150 mA collector current and 15 mA base current. Turn-on time is 35 μs and turn-off time is 300 μs. The collector is internally connected to the case.