Microsemi Corp. Bipolar Transistors - BJT JANTXV2N2219/TR

NPN silicon switching transistor for switching applications, housed in a TO-39 package. Collector-emitter voltage is 50 Vdc, collector-base voltage is 75 Vdc, and emitter-base voltage is 6.0 Vdc. Collector current is 800 mA, with total power dissipation of 3.0 W at +25°C. Thermal resistance from junction to case is 59 °C/W. Operating and storage junction temperature range is -55 to +200 °C. Current gain (hFE) ranges from 100 to 300 at 150 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 0.3 Vdc at 150 mA collector current and 15 mA base current. Turn-on time is 35 μs and turn-off time is 300 μs. Qualified per MIL-PRF-19500/251.