Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2218AL/TR

NPN silicon switching transistor in a TO-39 package with a collector-emitter voltage rating of 50 Vdc, collector-base voltage of 75 Vdc, and collector current of 800 mA. It has a maximum total power dissipation of 3.0 W at +25°C and a thermal resistance of 59 °C/W. The device meets MIL-PRF-19500/251 qualification standards. Forward current transfer ratio ranges from 30 to 150 at collector currents up to 150 mA and 20 to 120 at 500 mA. Collector-emitter saturation voltage is 0.3 Vdc at 150 mA collector current and 1.0 Vdc at 500 mA. Base-emitter saturation voltage is 0.6 to 1.2 Vdc at 150 mA and 2.0 Vdc at 500 mA. Turn-on time is 35 μs and turn-off time is 300 μs under specified test conditions. Operating and storage junction temperature range is from -55 to +200 °C.