Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2218/TR

The JANTXV2N2218 is an NPN silicon switching transistor in a TO-39 package, qualified to MIL-PRF-19500/251. It has a collector-emitter voltage rating of 50 Vdc, a collector-base voltage of 75 Vdc, and a collector current of 800 mA. Maximum power dissipation is 3.0 W at +25°C, with thermal resistance from junction to case of 59 °C/W. The operating and storage junction temperature range is -55 to +200 °C. Forward current transfer ratio ranges from 30 to 150 at 1.0 mA collector current and 10 V collector-emitter voltage. Collector-emitter saturation voltage is 0.3 V at 150 mA collector current and 15 mA base current. Input capacitance is 25 pF, output capacitance is 8.0 pF, turn-on time is 35 µs, and turn-off time is 300 µs. The collector is internally connected to the case.