Microsemi Corp. Bipolar Transistors - BJT Jantxv2N2060L/TR

Unitized dual NPN silicon transistor for high-reliability applications, packaged in a TO-78 case. Rated for a collector-emitter voltage of 60 Vdc, collector-base voltage of 100 Vdc, and emitter-base voltage of 7.0 Vdc, with a maximum collector current of 500 mAdc. Power dissipation is 540 mW for one section and 600 mW for both sections at +25°C, derating linearly with temperature. Operating and storage junction temperature range is -65°C to +200°C. Meets MIL-PRF-19500/270 qualification standards. Forward current transfer ratio ranges from 25 to 150 depending on test conditions. Collector-emitter saturation voltage is 0.3 Vdc at 50 mA collector current and 5 mA base current. Input capacitance is 85 pF and output capacitance is 15 pF under specified conditions.