MOSFET N-CH 100V 8A TO205AF
Manufacturer: Microsemi Corporation
Win Source Part Number: 110512-JANTX2N6796
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Family Name: 2N6796
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-205AF (TO-39)
Dimension: TO-205AD, TO-39-3 Metal Can
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 28.51nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 195 mOhm @ 8A, 10V
Alternative Parts (Cross-Reference): JANSR2N7272; IRFF130; IRFF130-JQR-B;
Introduction Date: September 17, 2008
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 8A TO205AF
| ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | JANTX2N6796 | 110512-JANTX2N6796 | JANTX2N6796 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - JANTX2N6796 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||
| V(BR)DSS | 100 volts | 100 volts | |
| IDSS | 8000 milliamps |
