Microsemi Corp. Bipolar Transistors - BJT Jantx2N6193

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Bipolar Transistors - BJT Power BJT
Description
Bipolar Transistors - BJT Power BJT
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The Jantx2N6193 is a PNP silicon medium power transistor qualified to MIL-PRF-19500/561 for JAN, JANTX, and JANTXV levels, housed in a TO-39 package. It has a collector-emitter voltage rating of 100 Vdc, collector current of 5.0 Adc, and total power dissipation of 10 W at +25°C case temperature. The thermal resistance from junction to case is 17.5 °C/W. DC current gain ranges from 40 to 240, with collector-emitter saturation voltage up to 1.2 Vdc at 5.0 Adc collector current. Operating and storage temperature range is -65 to +200°C. Safe operating area includes continuous operation at 5.0 Adc and 2.0 Vdc, or 55 mAdc at 90 Vdc.

Datasheet Summary
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The Jantx2N6193 is a PNP silicon medium power transistor qualified to MIL-PRF-19500/561 for JAN, JANTX, and JANTXV levels, housed in a TO-39 package. It has a collector-emitter voltage rating of 100 Vdc, collector current of 5.0 Adc, and total power dissipation of 10 W at +25°C case temperature. The thermal resistance from junction to case is 17.5 °C/W. DC current gain ranges from 40 to 240, with collector-emitter saturation voltage up to 1.2 Vdc at 5.0 Adc collector current. Operating and storage temperature range is -65 to +200°C. Safe operating area includes continuous operation at 5.0 Adc and 2.0 Vdc, or 55 mAdc at 90 Vdc.

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Bipolar Transistors - BJT
Jantx2N6193
Bipolar Transistors - BJT Jantx2N6193
Bipolar Transistors - BJT Power BJT

Bipolar Transistors - BJT Power BJT

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number Jantx2N6193
Product Name Bipolar Transistors - BJT
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