Microsemi Corp. Bipolar Transistors - BJT Jantx2N5680

The JANTXV2N5680 is a PNP silicon power transistor designed for amplifier applications, housed in a TO-39 package. It has a collector-emitter voltage rating of 120 Vdc, a collector current rating of 1.0 Adc, and a total power dissipation of 10 W at case temperature 25°C. The thermal resistance from junction to case is 17.5°C/W. Electrical characteristics include a forward current transfer ratio of at least 5 at 1.0 Adc collector current and a collector-emitter saturation voltage of up to 1.0 V at 500 mA collector and 50 mA base current. The device is qualified to MIL-PRF-19500/582 and operates over a temperature range of -65°C to +200°C.