The Jantx2N5667 is an NPN power silicon switching transistor in a TO-66 package, rated for a collector-emitter voltage of 300 Vdc and a collector-base voltage of 400 Vdc. It handles a maximum collector current of 5.0 Adc and dissipates 1.5 W at +25°C, derating to 35 W at +100°C. The device meets MIL-PRF-19500/455 qualification standards and operates within a junction temperature range of -65°C to +200°C. Its forward current transfer ratio ranges from 25 to 75 at 1.0 Adc collector current and 5.0 Vdc collector-emitter voltage, with a collector-emitter saturation voltage of 0.4 Vdc at 3.0 Adc collector and 0.6 Adc base current.
Bipolar Transistors - BJT Power BJT
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | Jantx2N5667 |
| Product Name | Bipolar Transistors - BJT |
