JANTX2N5666 is an NPN silicon switching transistor in a TO-5 package, rated for a collector-emitter voltage of 200 Vdc and a collector current of 5.0 Adc. It has a maximum power dissipation of 1.2 W at +25°C and 30 W at +100°C, with an operating and storage junction temperature range from -65°C to +200°C. The device meets MIL-PRF-19500/455 qualification standards. Forward-current transfer ratio ranges from 40 to 120 at I_C = 1.0 Adc and V_CE = 5.0 Vdc. Collector-emitter saturation voltage is 0.4 Vdc at I_C = 3.0 Adc and I_B = 0.3 Adc, and 1.0 Vdc at I_C = 5.0 Adc and I_B = 1.0 Adc. Turn-off time is 1.5 μs under specified switching conditions.
Trans GP BJT NPN 200V 5A 3-Pin TO-5 Product overview: JANTX2N5666 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 5A. Search-friendly keywords include transistor, BJT, switching, amplification, 200V, 5A, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANTX2N5666 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANTX2N5666 |
| Product Name | 200V 5A Bipolar Transistor |
| Polarity | NPN |
