Microsemi Corp. Bipolar Transistors - BJT Jantx2N5582/TR

The Jantx2N5582/TR is an NPN silicon switching transistor in a TO-206AB package, qualified to MIL-PRF-19500/423 for JAN, JANTX, and JANTXV levels. It has a collector-emitter voltage rating of 50 Vdc, collector-base voltage of 75 Vdc, and a maximum collector current of 800 mAdc. The total power dissipation is 0.5 W at 25°C, derating linearly above this temperature. The forward current transfer ratio (hFE) ranges from 50 to 300 depending on collector current and voltage, with collector-emitter saturation voltage up to 1.0 Vdc at 500 mA collector current and 50 mA base current. Switching times are 35 µs turn-on and 300 µs turn-off. Operating and storage junction temperature range is -55°C to +200°C.