The JANTX2N5153 is a radiation-hardened PNP power silicon transistor for high-reliability switching and amplification, packaged in a TO-39 case. It operates with a maximum collector-emitter voltage of 80 Vdc and continuous collector current of 2.0 Adc. At +25°C, it dissipates 10 W with a junction-to-case thermal resistance of 1.75°C/W. Its current gain (hFE) ranges from 50 to 200 at I_C = 2.5 A and V_CE = 5 V, with a collector-emitter saturation voltage of 0.75 V under the same conditions. Switching times are 0.5 μs turn-on and 1.5 μs turn-off. It is qualified per MIL-PRF-19500/545 and rated for 3 krad(Si) radiation tolerance as a JANSM device.
Trans GP BJT PNP 80V 2A 3-Pin TO-39 Product overview: JANTX2N5153 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 2A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 2A, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANTX2N5153 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANTX2N5153 |
| Product Name | 80V 2A Bipolar Transistor |
| IC(max) | 2000 milliamps |
