Microsemi Corp. Bipolar Transistors - BJT JANTX2N4957UB/TR

Description
Bipolar Transistors - BJT BJTs
Description
Bipolar Transistors - BJT BJTs
Datasheet
Datasheet Summary
Powered by GS/AI

The JANTX2N4957UB/TR is a military-qualified PNP silicon bipolar transistor for VHF-UHF amplifier, oscillator, and mixer applications, housed in a ceramic surface-mount UB package with gold-plated terminals. It has a maximum collector-emitter voltage of -30 V, collector current of -30 mA, and total power dissipation of 200 mW at 25 °C, derating linearly at 1.14 mW/°C above that. The transistor features a forward current transfer ratio (hFE) of 15 to 165, a noise figure of 3.5 dB at 450 MHz, and a small-signal power gain of 17 to 25 dB at 450 MHz. It meets MIL-PRF-19500/426 qualifications and is RoHS compliant.

Datasheet Summary
Powered by GS/AI

The JANTX2N4957UB/TR is a military-qualified PNP silicon bipolar transistor for VHF-UHF amplifier, oscillator, and mixer applications, housed in a ceramic surface-mount UB package with gold-plated terminals. It has a maximum collector-emitter voltage of -30 V, collector current of -30 mA, and total power dissipation of 200 mW at 25 °C, derating linearly at 1.14 mW/°C above that. The transistor features a forward current transfer ratio (hFE) of 15 to 165, a noise figure of 3.5 dB at 450 MHz, and a small-signal power gain of 17 to 25 dB at 450 MHz. It meets MIL-PRF-19500/426 qualifications and is RoHS compliant.

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
JANTX2N4957UB/TR
Bipolar Transistors - BJT JANTX2N4957UB/TR
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

Buy Now Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number JANTX2N4957UB/TR
Product Name Bipolar Transistors - BJT
Unlock Full Specs
to access all available technical data