Microsemi Corp. Bipolar Transistors - BJT JANTX2N4957/TR

The JANTX2N4957/TR is a military-qualified silicon PNP bipolar transistor designed for VHF-UHF amplifier, oscillator, and mixer applications in high-reliability systems. It is housed in a TO-72 metal package with a maximum power dissipation of 200 mW at 25°C, derating linearly at 1.14 mW/°C above that temperature. The transistor has a collector-emitter voltage rating of -30 V, a collector current limit of -30 mA, and a junction and storage temperature range of -65°C to +200°C. It meets MIL-PRF-19500/426 qualification standards for JANTX level reliability. Electrical characteristics include a forward current transfer ratio (hFE) of 15 to 165 at -5 mA collector current, a small-signal power gain of 17 to 25 dB at 450 MHz, and a noise figure of 3.5 dB at 450 MHz with a 50 Ω source. The collector-base capacitance is 0.8 pF under specified conditions.