Microsemi Corp. Bipolar Transistors - BJT Jantx2N4033/TR

PNP silicon switching transistor for switching applications, housed in a TO-39 (TO-205AD) package with a case dimension of 5.31 to 5.84 mm in height and 4.52 to 4.95 mm in diameter. Rated for a collector-emitter voltage of 80 Vdc and a continuous collector current of 1.0 Adc. Maximum power dissipation is 0.5 W at +25°C, with a thermal resistance junction-to-case of 40 °C/W. Operating and storage junction temperature range is from -65 to +200 °C. Qualified per MIL-PRF-19500/512. Switching times include an on-time of 15 µs, rise time of 25 µs, storage time of 175 µs, and fall time of 35 µs under specified test conditions.