Microsemi Corp. TRANSISTORS - Transistors (BJT) - Single - JANTX2N3879 JANTX2N3879

Manufacturer: Microsemi Corporation
Win Source Part Number: 1191507-JANTX2N3879
Series: Military, MIL-PRF-19500/526
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -65°C ~ 200°C (TJ)
Package: TO-213AA, TO-66-2
Power - Max: 35W
Transistor Type: NPN
Family Name: 2N3879
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.microsemi.com
RoHS State: Request Verification
Current - Collector (Ic) (Maximum): 7A
Voltage - Collector Emitter Breakdown (Maximum): 75V
Vce Saturation (Maximum) @ Ib, Ic: 1.2V @ 400mA, 4A
Current - Collector Cutoff (Maximum): 25mA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 20 @ 4A, 5V
Alternative Parts (Cross-Reference): 2N3879; 2SC4550-A; 2SC4550L-A;
Introduction Date: November 19, 1998
ECCN: EAR99
Country of Origin: Philippines
Estimated EOL Date: 2025
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Quantity per package: 1

Trans GP BJT NPN 75V 7A 3-Pin(2+Tab) TO-66 Product overview: JANTX2N3879 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 7A. Search-friendly keywords include transistor, BJT, switching, amplification, 75V, 7A, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANTX2N3879 can be used for catalog matching and distributor lookup.