PNP silicon bipolar transistor for switching and amplification applications, packaged in TO-39 (TO-205AD) with three pins, rated for 60 V collector-emitter breakdown voltage and 3.0 A collector current, with a total power dissipation of 1.0 W at +25°C and thermal resistance of 175 °C/mW. Operating and storage junction temperature range is -65°C to +200°C. Qualified per MIL-PRF-19500/350 for JANTX and JANTXV levels.
Small Signal Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-39, 3 PIN Product overview: JANTX2N3868S from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3A, 60V. Search-friendly keywords include transistor, BJT, switching, amplification, 3A, 60V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANTX2N3868S can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANTX2N3868S |
| Product Name | 3A 60V Bipolar Transistor |
| Polarity | PNP |
| IC(max) | 3000 milliamps |
| VCEO | 60 volts |
