Microsemi Corp. Bipolar Transistors - BJT Jantx2N3810

Jantx2N3810 is a PNP silicon dual transistor in a TO-78 package, designed for low-noise, high-gain amplifier applications. It shares the series' absolute maximum ratings of 60 V collector-emitter and collector-base voltage, 50 mA collector current, and 200 mW power dissipation per section at +25°C. Operating and storage junction temperatures range from -65°C to +200°C. Electrical characteristics include a forward-current transfer ratio (hFE) between 100 and 450 depending on collector current, collector-emitter saturation voltage of up to 0.25 V, and base-emitter saturation voltage up to 0.8 V. Small-signal forward current transfer ratio (hfe) ranges from 150 to 600 at 1.0 mA collector current and 1.0 kHz frequency. Noise figure is 3.5 dB under specified conditions. The device is qualified per MIL-PRF-19500/336.