Microsemi Corp. Bipolar Transistors - BJT Jantx2N3762

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Bipolar Transistors - BJT PNP Switching Silicon Transistor
Description
Bipolar Transistors - BJT PNP Switching Silicon Transistor
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PNP switching silicon transistor for high-reliability applications, packaged in a TO-39 (TO-205AD) case. Rated for a maximum collector-emitter voltage of 40 Vdc, collector-base voltage of 40 Vdc, and emitter-base voltage of 5.0 Vdc. Maximum collector current is 1.5 Adc with total power dissipation of 1.0 W at 25°C, derating at 5.71 mW/°C above 25°C. Thermal resistance junction-to-case is 60°C/W. Operating and storage junction temperature range is -55°C to +200°C. Qualified per MIL-PRF-19500/396 at JANTX level.

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PNP switching silicon transistor for high-reliability applications, packaged in a TO-39 (TO-205AD) case. Rated for a maximum collector-emitter voltage of 40 Vdc, collector-base voltage of 40 Vdc, and emitter-base voltage of 5.0 Vdc. Maximum collector current is 1.5 Adc with total power dissipation of 1.0 W at 25°C, derating at 5.71 mW/°C above 25°C. Thermal resistance junction-to-case is 60°C/W. Operating and storage junction temperature range is -55°C to +200°C. Qualified per MIL-PRF-19500/396 at JANTX level.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
Jantx2N3762
Bipolar Transistors - BJT Jantx2N3762
Bipolar Transistors - BJT PNP Switching Silicon Transistor

Bipolar Transistors - BJT PNP Switching Silicon Transistor

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number Jantx2N3762
Product Name Bipolar Transistors - BJT
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