Microsemi Corp. Bipolar Transistors - BJT JANTX2N3735L/TR

NPN silicon switching transistor in TO-39 package, rated for a collector-emitter voltage of 40 Vdc and a collector current of 1.5 Adc, with a total power dissipation of 2.9 W at TC = +25°C, and derated linearly at 16.6 mW/°C above +25°C. It meets MIL-PRF-19500/395 qualification, with a junction temperature range of -65 to +200°C. Electrical characteristics include a minimum forward current transfer ratio of 20 at IC = 1.0 Adc and VCE = 1.5 Vdc, and a collector-emitter saturation voltage of 0.9 Vdc at IC = 1.0 Adc and IB = 100 mA. Output capacitance is 9 pF at VCB = 10 Vdc, and input capacitance is 80 pF at VEB = 0.5 Vdc.