Microsemi Corp. Bipolar Transistors - BJT JANTX2N3735/TR

Description
Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT
Datasheet
Datasheet Summary
Powered by GS/AI

NPN silicon switching transistor in TO-39 package, rated for a collector-emitter voltage of 40 Vdc, collector-base voltage of 75 Vdc, and collector current of 1.0 Adc. Total power dissipation is 1.0 W at +25°C, derating at 5.71 mW/°C above that temperature. Operating and junction storage temperature range is -65°C to +200°C. Qualified to MIL-PRF-19500/395. Pinout: emitter (pin 1), base (pin 2), collector (pin 3).

Datasheet Summary
Powered by GS/AI

NPN silicon switching transistor in TO-39 package, rated for a collector-emitter voltage of 40 Vdc, collector-base voltage of 75 Vdc, and collector current of 1.0 Adc. Total power dissipation is 1.0 W at +25°C, derating at 5.71 mW/°C above that temperature. Operating and junction storage temperature range is -65°C to +200°C. Qualified to MIL-PRF-19500/395. Pinout: emitter (pin 1), base (pin 2), collector (pin 3).

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
JANTX2N3735/TR
Bipolar Transistors - BJT JANTX2N3735/TR
Bipolar Transistors - BJT

Bipolar Transistors - BJT

Buy Now Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number JANTX2N3735/TR
Product Name Bipolar Transistors - BJT
Unlock Full Specs
to access all available technical data