NPN silicon power transistor for high-current switching applications, housed in a TO-3 (TO-204AA) package, rated for a collector-emitter voltage of 80 Vdc and continuous collector current of 10 Adc, with a total power dissipation of 5.0 W at 25°C and derating of 28.57 mW/°C above that temperature, qualified to MIL-PRF-19500/408 under JAN and JANTXV levels, operating and storage junction temperature range from -65°C to +200°C.
Bipolar Transistors - BJT Power BJT
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | Jantx2N3716 |
| Product Name | Bipolar Transistors - BJT |
