Microsemi Corp. Bipolar Transistors - BJT Jantx2N3700

The Jantx2N3700 is a high-reliability NPN silicon transistor in a hermetically sealed TO-18 metal package, designed for military and high-reliability applications. It has a collector-emitter voltage rating of 80 V, collector-base voltage of 140 V, and collector current of 1.0 A. Maximum power dissipation is 0.5 W at +25 °C ambient temperature with linear derating of 2.85 mW/°C above that point. Thermal impedance is 325 °C/W junction-to-ambient and 150 °C/W junction-to-case. Current gain ranges from 15 to 300 depending on collector current. The device is qualified per MIL-PRF-19500/391 and RoHS compliant. Weight is approximately 0.3 grams. Package dimensions include a lead spacing of 2.54 mm and lead length up to 19.05 mm.