The JANTX2N3700/TR is a low-power NPN silicon transistor in a hermetically sealed TO-18 (TO-206AA) metal package, rated for high-reliability military applications. It has a collector-emitter voltage of 80 V, collector-base voltage of 140 V, and emitter-base voltage of 7.0 V, with a maximum collector current of 1.0 A and total power dissipation of 0.5 W at 25 °C ambient. Thermal impedance is 325 °C/W junction-to-ambient and 150 °C/W junction-to-case. Current gain ranges from 15 to 300 across collector current from 1.0 A to 0.1 mA. Input capacitance is 60 pF, output capacitance is 12 pF. The device is qualified per MIL-PRF-19500/391 and RoHS compliant in commercial grade. Weight is approximately 0.3 grams.
Bipolar Transistors - BJT BJTs
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | Jantx2N3700/TR |
| Product Name | Bipolar Transistors - BJT |
