Microsemi Corp. Bipolar Transistors - BJT Jantx2N3637L/TR

Description
Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT
Datasheet
Datasheet Summary
Powered by GS/AI

PNP silicon switching transistor for high-reliability applications, available in TO-5 package with a lead length of 1.500 to 1.750 inches, rated for a collector-emitter voltage of 175 Vdc, collector current of 1.0 Adc, and total power dissipation of 1.0 W at +25°C. Operating and storage junction temperature ranges from -65°C to +200°C. Qualified per MIL-PRF-19500/357.

Datasheet Summary
Powered by GS/AI

PNP silicon switching transistor for high-reliability applications, available in TO-5 package with a lead length of 1.500 to 1.750 inches, rated for a collector-emitter voltage of 175 Vdc, collector current of 1.0 Adc, and total power dissipation of 1.0 W at +25°C. Operating and storage junction temperature ranges from -65°C to +200°C. Qualified per MIL-PRF-19500/357.

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
Jantx2N3637L/TR
Bipolar Transistors - BJT Jantx2N3637L/TR
Bipolar Transistors - BJT

Bipolar Transistors - BJT

Buy Now Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number Jantx2N3637L/TR
Product Name Bipolar Transistors - BJT
Unlock Full Specs
to access all available technical data