Microsemi Corp. Bipolar Transistors - BJT JANTX2N3501UB/TR

The JANTX2N3501UB/TR is a military-qualified NPN silicon switching transistor in a low-profile ceramic U4 surface-mount package, compliant with JANTX reliability levels per MIL-PRF-19500/366. It has a collector-emitter voltage rating of 150 V, a collector current of 300 mA, and a total power dissipation of 1.5 W at 25°C. Thermal resistance is 90 °C/W from junction-to-solder pad and 325 °C/W from junction-to-ambient. The device features a minimum current gain of 20 at 300 mA collector current and a collector-emitter saturation voltage of 0.4 V at 150 mA collector and 15 mA base current. It meets RoHS compliance by design and has a junction and storage temperature range of -65°C to +200°C. The package weighs less than 0.04 grams and has gold-plated terminals, with pin assignments as base, emitter, collector, and shielded lid.