Microsemi Corp. Bipolar Transistors - BJT Jantx2N3501/TR

The JANTX2N3501 is a high-reliability NPN silicon transistor designed for medium power, high-frequency switching in military and aerospace applications. It is housed in a hermetically sealed TO-39 (TO-205AD) package with a weight of approximately 1.064 grams. The device has a collector-emitter voltage rating of 150 V, a collector current of 300 mA, and a maximum junction temperature range of -65 to +200 °C. Its thermal resistance is 30 °C/W from junction to case and 175 °C/W from junction to ambient. The forward current transfer ratio (hFE) ranges from 20 to 300 depending on collector current, and the collector-emitter saturation voltage is 0.6 V at 300 mA collector current. The part meets MIL-PRF-19500/366 qualifications for JANTX level reliability.