Microsemi Corp. Bipolar Transistors - BJT Jantx2N3500/TR

The JANTX2N3500/TR is a military-grade NPN silicon transistor designed for high-reliability and medium-power applications requiring high-frequency switching. It is housed in a TO-39 (TO-205AD) hermetically sealed package with a kovar base and nickel cap, weighing approximately 1.064 grams. The device has a collector-emitter voltage rating of 150 V and a maximum collector current of 300 mA. Thermal resistance is 30 °C/W from junction to case and 175 °C/W from junction to ambient. The transistor operates over a junction temperature range of -65 to +200 °C and meets MIL-PRF-19500/366 JANTX qualification. The package is RoHS compliant in commercial variants only. Electrical characteristics include a forward current transfer ratio (hFE) of 15 to 300, depending on collector current, and a collector-emitter saturation voltage of 0.4 V at 150 mA collector current. Switching times are 115 ns turn-on and 1150 ns turn-off at 150 mA collector current.