Microsemi Corp. Bipolar Transistors - BJT Jantx2N3499L/TR

The JANTX2N3499L/TR is a military-grade NPN silicon transistor from the 2N3498L-2N3501L series, designed for high-reliability medium-power switching applications. It is housed in a TO-5 package with a hermetically sealed kovar base and nickel cap, weighing 1.14 grams. The device has a collector-emitter voltage rating of 100 V, collector current of 500 mA, and maximum junction temperature of +200 °C. Thermal resistance is 30 °C/W junction-to-case and 175 °C/W junction-to-ambient. Minimum DC current gain is 35 at IC = 1 mA and 75 at IC = 10 mA. Collector-emitter saturation voltage is 0.2 V at IC = 10 mA and IB = 1 mA. Switching times are 115 ns turn-on and 1150 ns turn-off under specified conditions. It meets MIL-PRF-19500/366 JANTX qualification.