Microsemi Corp. Bipolar Transistors - BJT Jantx2N3499/TR

The Jantx2N3499 is an NPN silicon bipolar transistor in a hermetically sealed TO-39 (TO-205AD) package, designed for high-reliability military and medium-power applications requiring high-frequency switching. It has a collector-emitter voltage rating of 100 V, a collector current of 500 mA, and a junction temperature range of -65 to +200 °C. The device features a thermal resistance junction-to-case of 30 °C/W and a junction-to-ambient thermal resistance of 175 °C/W. It meets MIL-PRF-19500/366 JANTX reliability standards and is available in RoHS-compliant commercial versions. The transistor has a minimum current gain (hFE) of 35 at 1 mA and 75 at 10 mA, with a collector-emitter saturation voltage of 0.6 V at 300 mA collector current and 30 mA base current. The case is kovar with nickle-plated leads and solder-dipped terminations.