The JANTX2N3439 is a high-frequency NPN silicon bipolar transistor qualified to JANTX reliability level per MIL-PRF-19500/368, intended for medium power switching and amplification in military and high-reliability applications. It is housed in a TO-39 (TO-205AD) hermetically sealed package with a kovar base and nickel cap, measuring 7.75 to 8.51 mm in diameter and 12.70 to 19.05 mm in lead length. The part has a collector-emitter breakdown voltage of 350 V, a collector current rating of 1.0 A, and a total power dissipation of 0.8 W at 25°C. Collector-emitter saturation voltage is 0.5 V at 50 mA collector current and 4.0 mA base current. Turn-on time is 1.0 µs maximum and turn-off time is 10 µs maximum under specified conditions. The operating and storage junction temperature range is -65°C to +200°C.
Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, TO-39, 3 PIN Product overview: JANTX2N3439 from Microsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1A, 350V. Search-friendly keywords include transistor, BJT, switching, amplification, 1A, 350V, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-JANTX2N3439 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-JANTX2N3439 |
| Product Name | 1A 350V Bipolar Transistor |
| Polarity | NPN |
| IC(max) | 1000 milliamps |
| VCEO | 350 volts |
