Microsemi Corp. Bipolar Transistors - BJT Jantx2N3019S

The Jantx2N3019S is a military-qualified NPN silicon transistor in a TO-39 (TO-205AD) package, designed for high-reliability applications. It has a collector-emitter voltage rating of 80 V, collector-base voltage of 140 V, and maximum collector current of 1.0 A. Power dissipation is 0.8 W at +25°C ambient temperature, with thermal resistance junction-to-ambient at 195 °C/W and junction-to-case at 30 °C/W. The device is hermetically sealed with a kovar base and nickel cap, weighs approximately 1.064 grams, and meets MIL-PRF-19500/391 qualification standards for JANTX level reliability.