Microsemi Corp. Bipolar Transistors - BJT Jantx2N3019S/TR

The Jantx2N3019S/TR is a low-power NPN silicon transistor in a hermetically sealed TO-39 (TO-205AD) package, designed for high-reliability military applications. It has a collector-emitter voltage rating of 80 V, collector-base voltage of 140 V, and emitter-base voltage of 7.0 V. Maximum collector current is 1.0 A, with total power dissipation of 0.8 W at 25 °C ambient temperature. Thermal resistance is 195 °C/W junction-to-ambient and 30 °C/W junction-to-case. The device is qualified per MIL-PRF-19500/391, meeting JAN, JANTX, JANTXV, and JANS reliability levels, and is RoHS compliant by design. Weight is approximately 1.064 grams.