Microsemi Corp. Bipolar Transistors - BJT Jantx2N2907AUA

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Bipolar Transistors - BJT BJTs
Description
Bipolar Transistors - BJT BJTs
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PnP small signal silicon transistor for high-reliability applications, packaged in a TO-18 (TO-206AA) metal case with a 6.35 mm diameter and 12.70 mm lead length. Rated for a collector-emitter voltage of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. Operating and storage junction temperature range is -65°C to +200°C. Minimum forward current transfer ratio (hFE) is 100 at 10 mA collector current. Qualified per MIL-PRF-19500/291.

Datasheet Summary
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PnP small signal silicon transistor for high-reliability applications, packaged in a TO-18 (TO-206AA) metal case with a 6.35 mm diameter and 12.70 mm lead length. Rated for a collector-emitter voltage of 60 Vdc, collector current of 600 mAdc, and total power dissipation of 0.5 W at 25°C. Operating and storage junction temperature range is -65°C to +200°C. Minimum forward current transfer ratio (hFE) is 100 at 10 mA collector current. Qualified per MIL-PRF-19500/291.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
Jantx2N2907AUA
Bipolar Transistors - BJT Jantx2N2907AUA
Bipolar Transistors - BJT BJTs

Bipolar Transistors - BJT BJTs

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number Jantx2N2907AUA
Product Name Bipolar Transistors - BJT
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